Infineon IPB65R190CFDATMA1 190mΩ OptiMOS 6 Power MOSFET: Enabling High-Efficiency Power Conversion
In the evolving landscape of power electronics, achieving higher efficiency, power density, and thermal performance remains a critical goal. The Infineon IPB65R190CFDATMA1, a member of the OptiMOS™ 6 190mΩ power MOSFET family, stands out as a premier solution designed to meet these demanding requirements. This device is engineered to deliver exceptional performance in a wide range of applications, including server and telecom power supplies, industrial motor drives, solar inverters, and battery management systems.
A key highlight of the IPB65R190CFDATMA1 is its ultra-low on-state resistance (RDS(on)) of just 190mΩ. This remarkably low resistance significantly reduces conduction losses, which is paramount for improving overall system efficiency. By minimizing power dissipation, the MOSFET operates cooler, enhancing reliability and enabling more compact designs through reduced heatsinking needs. The device is housed in an advanced D2PAK (TO-263) package, offering an excellent balance between thermal performance and board space utilization.
Built on Infineon’s latest OptiMOS™ 6 technology platform, this MOSFET showcases major advancements over previous generations. It provides superior switching performance, which helps in lowering switching losses—especially critical in high-frequency switching applications such as DC-DC converters and PWM inverters. The technology also ensures a robust body diode with improved reverse recovery characteristics, contributing to higher efficiency in hard-switching and synchronous rectification topologies.
Another standout feature is its enhanced avalanche ruggedness and high maximum load current capability, making it suitable for harsh environments where reliability under overload conditions is essential. The MOSFET’s optimized gate charge (Qg) allows for faster switching and simpler drive circuit design, reducing driving losses and supporting higher operating frequencies.
Designers will appreciate the device’s versatility. Whether used in primary switching, secondary synchronous rectification, or as part of a motor drive circuit, the IPB65R190CFDATMA1 offers a compelling combination of low losses and thermal efficiency. This leads not only to energy savings but also to more sustainable and power-dense solutions.
The Infineon IPB65R190CFDATMA1 OptiMOS™ 6 190mΩ MOSFET sets a new benchmark for high-efficiency power conversion, combining minimal conduction losses, advanced switching performance, and superior thermal management in a compact package.
Keywords:
Power MOSFET, High-Efficiency, OptiMOS™ 6, Low RDS(on), Thermal Performance
