Infineon IPL65R340CFD: A 650V CoolMOS™ CFD2 Power Transistor for High-Efficiency Switching Applications

Release date:2025-10-21 Number of clicks:86

Infineon IPL65R340CFD: A 650V CoolMOS™ CFD2 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device is critical. The Infineon IPL65R340CFD, a 650V CoolMOS™ CFD2 transistor, is engineered specifically to meet these challenges, offering a blend of ultra-low effective dynamic losses and robust performance that sets a new benchmark for high-efficiency applications.

This MOSFET is built upon Infineon's advanced Charge Compensation Principle, a technology that enables an exceptionally low on-state resistance (RDS(on)) for a given die size. The IPL65R340CFD boasts a maximum RDS(on) of just 340 mΩ, which directly translates to reduced conduction losses. However, the true innovation of the CFD2 series lies in its dynamic performance. The device features integrated fast-recovery body diode and optimized internal cell structure, which drastically reduces reverse recovery charge (Qrr) and eliminates the need for an external anti-parallel diode in many circuits. This results in significantly lower switching losses, especially in hard-switching topologies like Power Factor Correction (PFC) and flyback converters.

The benefits of these characteristics are profound for designers. Systems can operate at higher switching frequencies without incurring prohibitive loss penalties. This allows for the use of smaller passive components, such as inductors and capacitors, leading to a substantial increase in overall power density. Furthermore, the reduced switching losses contribute to lower operational temperatures, enhancing system reliability and potentially simplifying thermal management requirements.

The 650V voltage rating provides a comfortable safety margin for universal mains applications (85 VAC to 305 VAC), making the IPL65R340CFD an ideal choice for a wide array of demanding applications. These include server and telecom switched-mode power supplies (SMPS), industrial motor drives, solar inverters, and high-performance lighting systems. Its robust design ensures high durability under harsh operating conditions.

ICGOOODFIND: The Infineon IPL65R340CFD exemplifies the evolution of power MOSFET technology, moving beyond mere RDS(on) minimization to master dynamic switching behavior. It is a pivotal component for engineers aiming to push the boundaries of efficiency and miniaturization in next-generation power electronics.

Keywords: CoolMOS™ CFD2, Ultra-low switching losses, High power density, 650V rating, Fast-recovery body diode.

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