Infineon IPL60R115CFD7 CoolMOS™ CFD7 Power Transistor: Datasheet, Application Notes, and Design Considerations

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of MOSFET technology. At the forefront of this innovation is Infineon's CoolMOS™ CFD7 series, with the IPL60R115CFD7 standing as a prime example of a high-performance superjunction (SJ) MOSFET engineered for demanding switched-mode power supplies (SMPS). This article delves into the key specifications from its datasheet, crucial application notes, and essential design considerations for engineers.

Datasheet Highlights and Key Specifications

The datasheet for the IPL60R115CFD7 reveals a component optimized for performance. It is rated for 650 V drain-source voltage, making it an ideal candidate for mains-powered applications, including server and telecom SMPS, industrial motor drives, and solar inverters. Its most striking feature is its exceptionally low on-state resistance (R DS(on)) of just 115 mΩ (max. at 25°C), which directly translates to reduced conduction losses and higher overall efficiency.

Furthermore, the CFD7 technology incorporates a fast body diode with improved reverse recovery characteristics (Q rr). This is a critical advancement over previous generations, as it significantly reduces switching losses, especially in hard-switching topologies like totem-pole PFC, and minimizes electromagnetic interference (EMI). The part also offers low gate charge (Q G) and low output capacitance (C oss), enabling faster switching speeds and improved performance at higher frequencies.

Application Notes: Unleashing Performance

To fully leverage the capabilities of the IPL60R115CFD7, designers must consider several application-focused insights:

1. Gate Driving Considerations: While the low Q G simplifies drive requirements, a low-inductance, capable gate driver circuit is essential to control switching speed and avoid parasitic turn-on. A gate driver IC with a peak current capability of several amps is recommended. A small gate resistor (R G) is used to tune the switching speed and manage EMI.

2. Thermal Management: Despite its low R DS(on), effective heat dissipation is paramount for reliable operation. The low thermal resistance of the package must be leveraged by designing a PCB with a sufficiently large copper drain tab (source pad) connected to internal layers or a heatsink. Continuous monitoring of junction temperature (T j) is advised in critical applications.

3. Utilizing the Fast Body Diode: In bridge circuits (e.g., PFC, half-bridge, full-bridge), the diode's reverse recovery behavior is utilized. The improved Q rr allows for higher switching frequencies without a proportional increase in switching losses, enabling smaller magnetic components.

Critical Design Considerations

PCB Layout: The high-speed switching capability of the CFD7 demands a meticulous PCB layout. The goal is to minimize parasitic inductance in the power loop (drain-source) and the gate drive loop. This involves using short, wide traces, tight component placement, and strategic use of vias to connect to ground and power planes.

Voltage Spikes and Snubbers: The rapid current changes (di/dt) can cause voltage spikes across the drain and source terminals due to stray inductance. In some designs, an RC snubber network across the drain and source may be necessary to clamp these spikes and prevent overvoltage stress on the device.

EMI Mitigation: Faster switching can lead to higher EMI. While the soft recovery diode helps, proper layout, shielding, and the use of ferrite beads on gate traces are common techniques to ensure compliance with EMI standards.

ICGOOODFIND

The Infineon IPL60R115CFD7 CoolMOS™ CFD7 represents a significant leap in power transistor technology, masterfully balancing ultra-low conduction losses with superior switching performance. Its fast body diode and high voltage rating make it a superior choice for high-efficiency, high-power-density SMPS designs. Successfully integrating this component hinges on a robust gate drive design, exceptional thermal management, and a PCB layout that minimizes parasitic elements, allowing designers to push the boundaries of modern power conversion.

Keywords:

1. CoolMOS™ CFD7

2. Low R DS(on)

3. Fast Body Diode

4. Switched-Mode Power Supply (SMPS)

5. Thermal Management