Infineon IPP60R280P7XKSA1: A High-Performance 600V CoolMOS P7 Power Transistor

The Infineon IPP60R280P7XKSA1 represents a significant advancement in power semiconductor technology, belonging to the renowned CoolMOS™ P7 series. This 600V superjunction MOSFET is engineered to deliver exceptional efficiency and reliability in a wide range of high-performance switching applications. Its design focuses on minimizing key losses, making it a premier choice for modern power supply designs striving for higher power density and improved energy efficiency.

A standout feature of this transistor is its ultra-low effective dynamic losses. The CoolMOS P7 technology achieves an outstanding balance between conduction and switching losses. With an RDS(on) of just 0.28Ω, it ensures minimal power dissipation during the on-state, directly contributing to higher system efficiency and reduced thermal stress. Furthermore, the device exhibits exceptionally low gate charge (Qg) and output capacitance (Coss), which are critical for achieving fast switching speeds and reducing switching losses, particularly in hard-switching topologies like totem-pole PFC.

The robustness of the IPP60R280P7XKSA1 is another key attribute. It incorporates advanced features such as integrated fast body diode with high dv/dt capability, which enhances its reliability in inductive switching environments and increases its resilience against unexpected voltage spikes. This makes it exceptionally suitable for challenging applications including server and telecom SMPS, industrial motor drives, and solar inverters. The component is also designed for ease of use, offering a high level of parameter consistency and reproducibility, which simplifies the design-in process and boosts manufacturing yield for power system producers.

Overall, the IPP60R280P7XKSA1 is a testament to Infineon's leadership in power electronics, providing designers with a component that pushes the boundaries of what is possible in efficiency and power density.

ICGOOODFIND: The Infineon IPP60R280P7XKSA1 is a top-tier 600V MOSFET that sets a high standard for performance, offering an optimal blend of ultra-low dynamic losses, robust switching characteristics, and high reliability for next-generation power systems.

Keywords: CoolMOS P7, Ultra-Low Dynamic Losses, High Efficiency, 600V MOSFET, Fast Switching