Infineon IPW65R050CFD7A: A 650V CoolMOS™ CFD7 Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon Technologies with its IPW65R050CFD7A, a 650V superjunction MOSFET from the groundbreaking CoolMOS™ CFD7 family. This device is engineered to set new benchmarks in performance for demanding applications such as server and telecom SMPS, industrial drives, and renewable energy systems.

A key differentiator of the CFD7 series is its integrated fast body diode, a feature that is paramount for hard-switching and bridge topologies. Traditional MOSFETs can suffer from significant reverse recovery losses (Qrr) in their intrinsic body diode, leading to reduced efficiency and potential reliability issues. The IPW65R050CFD7A addresses this head-on with a diode that boasts an exceptionally soft recovery characteristic and low reverse recovery charge (Qrr). This directly translates to reduced switching losses, lower electromagnetic interference (EMI), and enhanced system ruggedness, allowing for higher switching frequencies and more compact magnetic components.

Beyond its advanced diode, the IPW65R050CFD7A excels in all critical performance parameters. It offers an ultra-low typical on-state resistance (R DS(on)) of just 50 mΩ, which minimizes conduction losses and improves thermal performance. Combined with low figures of merit (FOMs like R DS(on) Qg), this MOSFET ensures that both conduction and switching losses are kept to an absolute minimum. The result is a cooler-running, more efficient power supply that can achieve higher power density and improved reliability.

The benefits extend to design simplicity. The stable switching behavior of the integrated diode can simplify snubber circuits and reduce the need for complex mitigation strategies, streamlining the design process and potentially lowering the overall bill of materials.

ICGOOODFIND: The Infineon IPW65R050CFD7A is not merely an incremental improvement but a significant leap forward. By masterfully combining an ultra-low R DS(on) with a uniquely optimized fast body diode, it delivers superior efficiency, increased power density, and enhanced robustness. It is a top-tier choice for engineers designing next-generation high-efficiency power systems where performance and reliability are non-negotiable.

Keywords:

CoolMOS™ CFD7, Integrated Fast Body Diode, Low Reverse Recovery Charge (Qrr), High Power Density, Ultra-Low R DS(on)