Infineon IPB120N06S402ATMA2: High-Performance OptiMOS 5 Power MOSFET for Automotive and Industrial Applications

The relentless push for higher efficiency, greater power density, and enhanced reliability in power electronics is a defining challenge across the automotive and industrial sectors. Addressing these demands head-on, Infineon Technologies has introduced the IPB120N06S402ATMA2, a power MOSFET that exemplifies the cutting-edge performance of the company's OptiMOS™ 5 60 V technology. This device is engineered to set a new benchmark in switching performance and power conversion efficiency for a wide array of demanding applications.

At the heart of this MOSFET's superior performance is its exceptionally low typical on-state resistance (R DS(on)) of just 1.2 mΩ. This critical parameter is a primary determinant of conduction losses; a lower R DS(on) means less energy is wasted as heat when the device is fully switched on. This translates directly into higher overall system efficiency, reduced thermal management requirements, and the potential for more compact designs. Furthermore, the component features low gate charge (Q G) and outstanding switching characteristics, which significantly minimize switching losses—a crucial advantage in high-frequency circuits such as switch-mode power supplies (SMPS) and motor drive controllers.

The IPB120N06S402ATMA2 is housed in an Infineon’s proprietary SuperSO8 package (PG-TDSON-8), which offers a drastically reduced footprint compared to standard D2PAK or DPAK packages. Despite its small size, this package is designed for optimal thermal performance, featuring an exposed die pad that efficiently transfers heat to the PCB, allowing the MOSFET to handle high continuous drain current (I D) up to 240 A. This combination of small size and high current-handling capability is ideal for space-constrained applications where maximizing power density is paramount.

Designed with mission-critical systems in mind, this component boasts AEC-Q101 qualification, ensuring it meets the stringent quality and reliability standards required for automotive electronics. It is perfectly suited for use in 48 V board net systems, electric power steering (EPS), braking systems, and DC-DC converters in hybrid and electric vehicles. In the industrial sphere, its robustness and efficiency make it an excellent choice for server power supplies, telecom infrastructure, industrial motor drives, and solar inverters.

ICGOOFind: The Infineon IPB120N06S402ATMA2 is a top-tier OptiMOS 5 power MOSFET that delivers an exceptional blend of ultra-low R DS(on), superior switching performance, and high power density in a compact package. Its automotive-grade qualification makes it a cornerstone component for next-generation, high-efficiency power systems in both automotive and industrial markets.

Keywords: OptiMOS 5, Low R DS(on), AEC-Q101, Power Density, SuperSO8 Package.