Infineon IPB180N10S402ATMA1: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPB180N10S402ATMA1 stands out as a premier solution, leveraging the advanced OptiMOS™ 5 technology to set a new benchmark in performance for power conversion systems. This 100 V N-channel power MOSFET is engineered to minimize losses and maximize reliability in a compact package, making it an ideal choice for a wide array of demanding applications.
At the heart of this device's superior performance is its exceptionally low typical on-state resistance (R DS(on)) of just 1.8 mΩ. This critical parameter is a primary determinant of conduction losses; a lower R DS(on) means less energy is wasted as heat when the transistor is fully switched on. This translates directly into higher overall system efficiency, cooler operation, and the potential for reduced cooling requirements. Furthermore, the MOSFET features outstanding switching characteristics, achieved through optimized internal packaging and chip design. The low gate charge (Q G ) and figure-of-merit (FOM) ensure rapid switching transitions, which are crucial for high-frequency operation in switch-mode power supplies (SMPS), leading to smaller magnetic components and higher power density.
The benefits of the OptiMOS 5 technology extend beyond raw electrical performance. The IPB180N10S402ATMA1 is housed in an Infineon’s proprietary SuperSO8 package (PG-TDSON-8), which offers a significantly improved footprint compared to standard packages. More importantly, this package boasts an ultra-low parasitic inductance, which is vital for suppressing voltage overshoots and ensuring stable, clean switching behavior at high di/dt rates. This enhances system robustness and allows designers to push the limits of switching frequency without compromising reliability.
This combination of low resistance, fast switching, and a superior package makes the IPB180N10S402ATMA1 exceptionally versatile. It is perfectly suited for a broad spectrum of applications, including:
Synchronous rectification in server and telecom SMPS.
DC-DC conversion stages in industrial motor drives and robotics.
High-current switching in battery management systems (BMS) and solar inverters.
Power management for automotive systems and 48V mild-hybrid vehicles.
ICGOODFIND: The Infineon IPB180N10S402ATMA1 is a top-tier power MOSFET that exemplifies the progress in semiconductor technology. Its blend of extremely low R DS(on), fast switching speed, and a thermally efficient, low-inductance package provides engineers with a critical component to build more efficient, compact, and reliable power conversion systems for the next generation of electronic equipment.
Keywords: OptiMOS 5, Low R DS(on), High-Efficiency, Power Conversion, SuperSO8 Package.
